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Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8"): Difference between revisions

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The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 150 mm and 200 mm wafers can be processed in the furnace.
The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 150 mm and 200 mm wafers can be processed in the furnace.


The Oxidation (8") furnace is the top furnace tube in the E-stack furnaces, which positioned in cleanroom E-6. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from C1 furnace, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace.  
The Oxidation (8") furnace is the top furnace tube in the furnace E-stack, which positioned in cleanroom E-6. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from C1 furnace, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace.  


Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.  
Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.  
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Oxidation:
Oxidation:
*Dry oxidation using O<sub>2</sub>  
*Dry oxidation using O<sub>2</sub>  
*Wet oxidation using DI Water steam injection system ( Bronkhorst)  
*Wet oxidation using DI Water steam injection system (Bronkhorst)  
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!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
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*N<sub>2</sub>: 0-30 slm  
*N<sub>2</sub>: 0-30 slm  
*O<sub>2</sub>: 0-30 slm
*O<sub>2</sub>: 0-30 slm
*Steamer flow : 0-12.5 slm (Standard recipe is set at 9.5 slm )  
*Steamer flow : 0-12.5 slm (Standard recipe is set at 9.5 slm)  
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-30 100 mm or 150 mm wafers (or 50 mm wafers)
*1-50 150 mm or 200 mm wafers  
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| style="background:LightGrey; color:black"|Substrate materials allowed
| style="background:LightGrey; color:black"|Substrate materials allowed
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