Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8"): Difference between revisions
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== | ==Oxidation (8") furnace (E1)== | ||
[[Image:C1.JPG|thumb|300x300px|Anneal-oxide furnace (C1). Positioned in cleanroom | [[Image:C1.JPG|thumb|300x300px|Anneal-oxide furnace (C1). Positioned in cleanroom E-6]] | ||
The | The Oxidation (8") furnace (E1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. Both 150 mm and 200 mm wafers can be processed in the furnace. | ||
The | The Oxidation (8") furnace is the top furnace tube in the E-stack furnaces, which positioned in cleanroom E-6. Most of wafers have to be RCA cleaned, before they enter the furnace. The only exceptions are brand new wafers, wafers from the A-stack furnaces, wafers from C1 furnace, wafers from the LPCVD furnaces (B- and E-stack furnaces) and wafers from PECVD4. Please check the cross contamination information in LabManager, before you use the furnace. | ||
Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature. | Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature. | ||
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'''The user manual, technical information and contact information can be found in LabManager:''' | '''The user manual, technical information and contact information can be found in LabManager:''' | ||
'''[ | '''[https://labmanager.dtu.dk/d4Show.php?id=14773&mach=499 Oxidation (8") furnace (E1)]''' | ||
==Process knowledge== | ==Process knowledge== | ||