Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions
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*RCA1: 10 min | *RCA1: 10 min | ||
*DI water rinsing (dumping three times) | *DI water rinsing (dumping three times) | ||
*HF: 30 sec (avoid | *HF: 30 sec (you may avoid this step in case of a very thin oxide (0-200 Å) as the top layer) | ||
*DI water rinsing (dumping three times) | *DI water rinsing (dumping three times) | ||
*RCA2: 10 min | *RCA2: 10 min | ||