Specific Process Knowledge/Lithography/SU-8: Difference between revisions
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Developing of the SU-8 patterns is done in the [[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|special developing station]] placed in cleanroom C-1 at Danchip. Under developing the substrates are immersed in Propylene Glycol Methyl Ether Acetate (PGMEA) first in a bath marked "First" and after in a bath marked "Final". | Developing of the SU-8 patterns is done in the [[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|special developing station]] placed in cleanroom C-1 at Danchip. Under developing the substrates are immersed in Propylene Glycol Methyl Ether Acetate (PGMEA) first in a bath marked "First" and after in a bath marked "Final". | ||
The development time is dependent on the layer thickness. Minimum development time: 1 min per 20µm in | The development time is dependent on the layer thickness. Minimum development time: 1 min per 20µm in "First". | ||
After the development the substrate must be rinsed with Isopropyl Alcohol (IPA) on both side for 30 sec. White traces during rinsing indicate incomplete development of SU-8. | After the development the substrate must be rinsed with Isopropyl Alcohol (IPA) on both side for 30 sec. White traces during rinsing indicate incomplete development of SU-8. | ||
Finally the substrates are dried in air in the drying box or with a nitrogen gun. | Finally the substrates are dried in air in the drying box or with a nitrogen gun. | ||