Specific Process Knowledge/Thin film deposition/Deposition of Platinum: Difference between revisions

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Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Temescal)	E-beam evaporation (Wordentec)	Sputter deposition (Lesker)
General description	E-beam deposition of Pt	E-beam deposition of Pt	Sputter deposition of Pt
Pre-clean	Ar ion source	none	RF Ar clean
Layer thickness	10Å - 600nm*	10Å - 600nm*	10Å - 600nm*
Deposition rate	0.5Å/s to 10Å/s	0.5Å/s to 10Å/s	up to 3.74 Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) smaller wafers and pieces	24x2" wafers or 6x4" wafers or 6x6" wafers	1x4" wafer or 1x6" wafer smaller pieces
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment

* If depositing a total of more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.

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 Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.
-* [[Specific Process Knowledge/Thin film deposition/Deposition of Platinum/Deposition of Pt in Sputter System (Lesker)|Deposition of Pt in Sputter System (Lesker)]]
+* [[Specific Process Knowledge/Thin film deposition/Deposition of Platinum/Deposition of Pt in Sputter System (Lesker)|Deposition of Platinum in Sputter System (Lesker)]]
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 |0.5Å/s to 10Å/s
 |0.5Å/s to 10Å/s
-|? Å/s to ? Å/s
+|up to 3.74 Å/s
 |-
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