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Specific Process Knowledge/Characterization/Stress measurement: Difference between revisions

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===When a thin film is deposited on one side of the wafer===
===When a thin film is deposited on one side of the wafer===
#Make a pre-stress measurement. Measure the wafer bow on one of the stylus profilometers in the cleanroom ([[Specific Process Knowledge/Characterization/Profiler#Dektak XTA_new stylus profiler|Dektak XTA_new]] or [[Specific Process Knowledge/Characterization/Profiler#Stylus Profiler (Tencor P17)|P17 Stylus profiler]]). Save the measurement. It is a good idea to measure across most of the wafer (at least along 70% of the wafer diameter) in two directions perpendicular to each other.
#Measure the thickness of the wafer
#Measure the thickness of the wafer
#Make a pre-stress measurement. Measure the wafer bow on one of the stylus profilometers in the cleanroom ([[Specific Process Knowledge/Characterization/Profiler#Dektak XTA_new stylus profiler|Dektak XTA_new]] or [[Specific Process Knowledge/Characterization/Profiler#Stylus Profiler (Tencor P17)|P17 Stylus profiler]]). Save the measurement. It is a good idea to measure across most of the wafer (at least along 70% of the wafer diameter) in two directions perpendicular to each other. Using the P17 profiler you can also measure a radially resolved map of the wafer stress with up to 5° resolution.
#Deposit the thin film
#Deposit the thin film
#Measure the thickness of the thin film (ex. using the FilmTek or the Ellipsometer).
#Measure the thickness of the thin film (ex. using the FilmTek or the Ellipsometer).