Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions
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| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 4" wafers | | style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 4" wafers | ||
| style="background:WhiteSmoke; color:black"| Silicon etching of 4" wafers | | style="background:WhiteSmoke; color:black"| Silicon etching of 4" wafers | ||
| style="background:WhiteSmoke; color:black"| Research tool into silicon etching | | style="background:WhiteSmoke; color:black"| Research tool into silicon etching - only a few special recipes! | ||
| style="background:WhiteSmoke; color:black"| Silicon etching of 6" wafers on 6" wafers | | style="background:WhiteSmoke; color:black"| Silicon etching of 6" wafers on 6" wafers | ||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 6" wafers | | style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 6" wafers |
Revision as of 09:15, 2 December 2021
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Hardware and option comparison of the dry etchers
The table below compares the hardware and the options.
ASE | AOE | DRIE-Pegasi | ICP Metal etch | III-V RIE | III-V ICP | IBE/IBSD Ionfab 300 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Pegasus 1 | Pegasus 2 | Pegasus 3 | Pegasus 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Purpose | Primary uses | Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed. | Etching of silicon oxides or nitrides on 4" wafers | Silicon etching of 4" wafers | Research tool into silicon etching - only a few special recipes! | Silicon etching of 6" wafers on 6" wafers | Etching of silicon oxides or nitrides on 6" wafers | Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo | Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | Physical Etching of all materials | ||||||||||||||||||||||||||||||||||||||||||||||||||
Alternative or backup uses | Backup silicon etcher | Barc etch | Silicon etcher | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
General description | Plasma source | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | Parallel plate capacitor setup with RF power between the two electrodes | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | Ion beam etcher - sputter etches with argon ions | |||||||||||||||||||||||||||||||||||||||||||||||||||||
Substrate cooling and temperature | The electrode is oil cooled. Also, Helium backside cooling: -10oC to 20oC | The electrode is oil cooled. Also, Helium backside cooling: -10oC to 60oC | The electrode is oil cooled. Also, Helium backside cooling: -20oC to 30oC | The electrode is oil cooled. Also, Helium backside cooling: -10oC to 50oC | The electrode is oil cooled: Fixed at 20oC | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20oC to 180oC | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5oC to 60?oC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Clamping and wafer size | Electrostatic clamping (semco electrode) Wafer size 4" |
Electrostatic clamping (TDESC) Wafer size 4" |
Electrostatic clamping (TDESC) Wafer size 4" |
Electrostatic clamping (TDESC) Wafer size 6" |
Electrostatic clamping (TDESC) Wafer size 6" |
No clamping Sample size up to 4" |
Mechanical clamping (weighted clamp with ceramic fingers) Wafer size 4" |
Mechanical clamping Wafer sizes 2"/4"/6"/8" | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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RF generators |
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Substrate loading | Loading via dedicated two-slot carousel load lock | Loading via dedicated two-slot carousel load lock | Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader | Loading via dedicated two-slot carousel load lock | Loading via two cassette loading stations pumped down at vacuum | Loading via dedicated two-slot carousel load lock | Manual loading directly into process chamber | Loading via dedicated two-slot carousel load lock | Automatic loading via load lock | ||||||||||||||||||||||||||||||||||||||||||||||||||||
Options |
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Allowed materials | Materials |
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Cross contamination sheet | Link | Link | Link | Link | Link | Link | Link | Link | Link | Link |