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Specific Process Knowledge/Wafer and sample drying/Critical Point Dryer: Difference between revisions

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'''This page is under construction and the values and data below are not all correct right now./ KN'''
'''Critical Point Dryer'''
'''Critical Point Dryer'''


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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
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1 atm to (maximum) 95 atm (1400 PSI)
1 atm to (maximum) 95 atm (1400 PSI)
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|style="background:LightGrey; color:black"|Piston Force
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*Depending on the area, for 4" wafers 200-20000N.
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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*One 4" or 6" wafer per run
*1 to 5 wafers per run. Sizes: 2”, 4" or 6" or
*Pieces are only allowed with speciel permission  
*Pieces (up to 10x10mm)  
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| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
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*Quartz wafers
*Quartz wafers
*Pyrex wafers
*Pyrex wafers
*InAlP
*GaAs
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| style="background:LightGrey; color:black"|Material allowed on the substrate
| style="background:LightGrey; color:black"|Material allowed on the substrate
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*Silicon oxide
*Silicon oxide
*Silicon (oxy)nitride
*Silicon nitride
*Poly Silicon
*Poly Silicon
*Photoresist
*PMMA
*TOPAS
*SU-8
*SU-8
*Metals: Au, Sn, Ag, Al, Ti.
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Process parameter range Process Temperature 0 oC temperature to 45oC
Process pressure 1 atm to (maximum) 95 atm (1400 PSI)
Substrates Batch size 1 to 5 wafers per run. Sizes: 2”, 4" or 6"
or
Pieces (up to 10x10mm)
Substrate material allowed Silicon wafers
Quartz wafers
Pyrex wafers
InAlP
GaAs
Material allowed on the substrate Silicon oxide
Silicon nitride
Poly Silicon
SU-8