Specific Process Knowledge/Wafer and sample drying/Critical Point Dryer: Difference between revisions
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'''Critical Point Dryer''' | '''Critical Point Dryer''' | ||
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!style="background:silver; color:black" align="left" valign="top" rowspan=" | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
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1 atm to (maximum) 95 atm (1400 PSI) | 1 atm to (maximum) 95 atm (1400 PSI) | ||
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *1 to 5 wafers per run. Sizes: 2”, 4" or 6" or | ||
*Pieces | *Pieces (up to 10x10mm) | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
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*Quartz wafers | *Quartz wafers | ||
*Pyrex wafers | *Pyrex wafers | ||
*InAlP | |||
*GaAs | |||
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| style="background:LightGrey; color:black"|Material allowed on the substrate | | style="background:LightGrey; color:black"|Material allowed on the substrate | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon oxide | *Silicon oxide | ||
*Silicon | *Silicon nitride | ||
*Poly Silicon | *Poly Silicon | ||
*SU-8 | *SU-8 | ||
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