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Specific Process Knowledge/Wafer and sample drying/Critical Point Dryer: Difference between revisions

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New page: '''Critical Point Dryer''' The critical point dryer is used to dry fragile structures that may be damaged in a normal drying procedure. Fragile structures may be thin membranes, or free h...
 
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'''This page is under construction and the values and data below are not all correct right now./ KN'''
'''Critical Point Dryer'''
'''Critical Point Dryer'''


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Purpose Drying of wafers or chips To dry fragile structures (example membranes, grippers, cantilevers).
{| border="2" cellspacing="0" cellpadding="10"
|-
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Drying of wafers or chips
|style="background:WhiteSmoke; color:black"|
To dry fragile structures (example membranes, grippers, cantilevers).
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
*Room temperature to 500<math>\rm{^o}</math>C
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
*~5<math>\cdot</math>10<sup>-4</sup>mbar - 2000mbar
|-
|style="background:LightGrey; color:black"|Piston Force
|style="background:WhiteSmoke; color:black"|
*Depending on the area, for 4" wafers 200-20000N.
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*One 4" or 6" wafer per run
*Pieces are only allowed with speciel permission 
|-
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
*Silicon wafers
*Quartz wafers
*Pyrex wafers
|-
| style="background:LightGrey; color:black"|Material allowed on the substrate
|style="background:WhiteSmoke; color:black"|
*Silicon oxide
*Silicon (oxy)nitride
*Poly Silicon
*Photoresist
*PMMA
*TOPAS
*SU-8
*Metals: Au, Sn, Ag, Al, Ti.
|-
|}
 
 
Process parameter range Process Temperature 0 oC temperature to 45oC  
Process parameter range Process Temperature 0 oC temperature to 45oC  
Process pressure 1 atm to (maximum) 95 atm (1400 PSI)
Process pressure 1 atm to (maximum) 95 atm (1400 PSI)