Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

@@ Line 323: / Line 323: @@
 Amorphous silicon can be used as a mask fro SiO2 etching.<br/>
 For very long and deep etches of SiO2/Quartz (several hours/micrometers) <br/>
-we have indications that show that it is not good to use the SiO etch. <br/>
+we have indications that show that it is not good to use the BOE 7:1 Etchant VLSI with Surfactant etch. <br/>
-The amorphous silicon has small holes (etch pits) which the SiO etch penetrates and the SiO2 below is etched.
+The amorphous silicon has small holes (etch pits) which the BOE 7:1 Etchant VLSI with Surfactant etch penetrates and the SiO2 below is etched.
 |-
 |}