Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions
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*Annealing of wafers with aluminium | *Annealing of wafers with aluminium | ||
*Annealing of wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
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* | *Normally 350-550 <sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure |
Revision as of 09:05, 5 October 2021
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Aluminium Anneal furnace (C4)
The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for annealing of silicon wafers with aluminium or ALD oxides Al2O3 and TiO2.
This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom B-1. In this furnace allowed to process wafers that contain aluminium. Please check the cross contamination information in LabManager, before you use the furnace.
The user manual, technical information and contact information can be found in LabManager:
Process knowledge
- Annealing: look at the Annealing page
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