Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions
| Line 28: | Line 28: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Annealing of wafers with aluminium | *Annealing of wafers with aluminium | ||
*Annealing of wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD | |||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *Normally 350-550 <sup>o</sup>C | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||