Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions

From LabAdviser
Rkch (talk | contribs)
No edit summary
Rkch (talk | contribs)
No edit summary
Line 2: Line 2:


Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.  
Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.  
Chemical etching can be done using HF (160nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.  
Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.  
We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.
We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.



Revision as of 13:11, 3 September 2021

Feedback to this page: click here

Etching Al2O3 can be done both chemically (wet) and by dry etching. Chemical etching can be done using BHF (60nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.