Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions

Revision as of 12:09, 3 September 2021

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Etching Al₂O₃ can be done both chemically (wet) and by dry etching. Chemical etching can be done using HF (160nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al. We have done some test of Al₂O₃ in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.

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 Etching Al<sub>2</sub>O<sub>3</sub> can be done both chemically (wet) and by dry etching.
-Chemical etching can be done using HF or a developer. The last has not been tested. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min.
+Chemical etching can be done using HF (160nm/min) or a developer (4nm/min). This will be selective to most materials not containing Al.
 We have done some test of Al<sub>2</sub>O<sub>3</sub> in dry etching. It has been mostly tested in the III-V ICP and ICP Metal. Please see links below.