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Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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No edit summary
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|Etch rate in thermal oxide
|Etch rate in thermal oxide
|'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape  
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|'''40-50 nm/min''' bghe (2019-2021 5 tests)
'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape <br>
'''40-50 nm/min''' bghe (2019-2021 5 tests)
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|Selectivity to  resist [:1]
|Selectivity to  resist [:1]
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