Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation: Difference between revisions
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= Characterization of DRIE silicon trenches = | = Characterization of DRIE silicon trenches = | ||
Dry etched silicon trenches come in many sizes and shapes. In most cases the best way of characterizing them is to cleave the wafer perpendicular to the trench and inspect the profile in an SEM or optical microscope. In the SEM the challenge is to get the best information possible about the profile in as little time as possible. The information acquired must be simple and useful. Below is an example. | |||
[[File:etched profiles (3).PNG|1000px]] | [[File:etched profiles (3).PNG|1000px]] | ||
== Measurements == | |||
Many users make measurements using the annotations in the SEM. Either top view measurements of heights/widths or tilted samples | |||
=== Input parameters === | === Input parameters === | ||
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'''At the SEM''' | '''At the SEM''' | ||
However, instead of adding a ton of measurements to each SEM image while at the SEM and hence spend an unreasonable amount of time there, one can postpone making the measurements till afterwards. The only requirement is that the pixel size of every SEM image is known - one can add it to the datazone: See any SEM manual for instructions - for instance [http://labmanager.dtu.dk/d4Show.php?id=2180&mach=275#dafs29430 '''HERE'''] | |||
'''Making measurements''' | '''Making measurements''' | ||