Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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|Process volume | |Process volume | ||
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*1- | *1-25 4" wafer per run | ||
*deposition on both sides of the substrate | *deposition on both sides of the substrate | ||
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| Line 65: | Line 65: | ||
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*Silicon | *Silicon | ||
**with layers of silicon oxide or silicon (oxy)nitride | |||
*Quartz | *Quartz | ||
*Small amount of metal (in PECVD3) | *Small amount of metal (in PECVD3) | ||