Specific Process Knowledge/Bonding/Wafer Bonder 02: Difference between revisions

Revision as of 10:01, 30 March 2021

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The Wafer bonder 02 is a system for bonding. 3 different types of bonding can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.

The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager: Equipment info in LabManager

Process information

Types of Bonding

Overview of the performance of the Wafer Bonder 02 and some process related parameters

Purpose	Bonding	Eutectic bonding Fusion bonding Anodic bonding
Performance	Alignment accuracy	± 2 microns for IR alignment ± 5 microns for backside alignment
Process parameter range	Process Temperature	Room temperature to 500 ${\rm {^{o}}}$ C
	Process pressure	~5 $\cdot$ 10^-4mbar - 1000mbar
	Piston Force	Depending on the area, for 4" wafers 200-6000 mbar.
Substrates	Batch size	One wafer per run Pieces
	Substrate material allowed	Silicon wafers Quartz wafers Pyrex wafers
	Material allowed on the substrate	Silicon oxide Silicon (oxy)nitride Poly Silicon Metals: Au, Sn, Ag, Al, Ti

@@ Line 66: / Line 66: @@
 *Silicon (oxy)nitride
 *Poly Silicon
-*Metals: Au, Sn, Ag, Al, Ti.
+*Metals: Au, Sn, Ag, Al, Ti
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