Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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![[Specific Process Knowledge/Etch/III-V RIE |III-V RIE]] | ![[Specific Process Knowledge/Etch/III-V RIE |III-V RIE]] | ||
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ||
![[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4|DRIE Pegasus 4]] | |||
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP metal]] | ![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP metal]] | ||
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ||
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*Anisotropic etch: almost vertical sidewalls | *Anisotropic etch: almost vertical sidewalls | ||
*We prefer that SiO2 etch takes place in the | | | ||
*Anisotropic etch: almost vertical sidewalls | |||
*We prefer that SiO2 etch on 6" wafers takes place in the Pegasus 4. | |||
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*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
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*Aluminium | *Aluminium | ||
*Chromium (Please try to avoid this) | *Chromium (Please try to avoid this) | ||
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*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Si | |||
*Silicon Nitride | |||
*Chromium (ask for permission) | |||
| | | | ||
*Photoresist | *Photoresist | ||
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*Process dependent | *Process dependent | ||
*Tested range: ~60nm/min - ~550nm/min | *Tested range: ~60nm/min - ~550nm/min | ||
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*Process dependent | |||
<500nm/min | |||
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*Process dependent | *Process dependent | ||
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*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | *<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | ||
| | |||
*As many small samples as can be bonded on a 150mm wafer | |||
*<nowiki>#</nowiki>1 50 mm wafer bonded on a 150mm wafer | |||
*<nowiki>#</nowiki>1 100 mm wafer bonded on a 150nm wafer | |||
*<nowiki>#</nowiki>1 150 mm wafers | |||
| | | | ||
*As many small samples as can be fitted on a 150mm wafer | *As many small samples as can be fitted on a 150mm wafer | ||
*<nowiki>#</nowiki>1 50 mm wafer | *<nowiki>#</nowiki>1 50 mm wafer fittesd on a 150mm wafer | ||
*<nowiki>#</nowiki>1 100 mm wafer fitted on a 150nm wafer | *<nowiki>#</nowiki>1 100 mm wafer fitted on a 150nm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafers | *<nowiki>#</nowiki>1 150 mm wafers | ||
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*Aluminium | *Aluminium | ||
*Chromium (try to avoid it) | *Chromium (try to avoid it) | ||
*Quartz/fused silica | |||
| | |||
*[http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Please take a look in the cross contamination sheet in LabManager for details] | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Chromium | |||
*Quartz/fused silica | *Quartz/fused silica | ||
| | | | ||