Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions

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	<gallery caption="Recipe no. 10: C06445_02 coil_2500W, platen:300W, He/C4F8= 17.5, C4F8/H2=1, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:25.6sccm, 3:56 min " perrow="4">		<gallery caption="Recipe name: SiO2_res_10 Recipe no. 10: C06445_02 coil_2500W, platen:300W, He/C4F8= 17.5, C4F8/H2=1, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:25.6sccm, 3:56 min " perrow="4">

	Image:C06445_02_11.jpg\|0.4µ/0.2µ<br> Bad lithography		Image:C06445_02_11.jpg\|0.4µ/0.2µ<br> Bad lithography