Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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<gallery caption="Recipe no. 10: C06445_02 coil_2500W, platen:300W, He/C4F8= 17.5, C4F8/H2=1, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:25.6sccm, 3:56 min " perrow="8"> | <gallery caption="Recipe no. 10: C06445_02 coil_2500W, platen:300W, He/C4F8= 17.5, C4F8/H2=1, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:25.6sccm, 3:56 min " perrow="8"> | ||
Image:C06445_02_11.jpg|0.4µ/0.2µ<br> | Image:C06445_02_11.jpg|0.4µ/0.2µ<br> Bad lithography | ||
Image:C06445_02_10.jpg|0.5/0.25µ<br> Etch depth: 652 nm<br> Resist left: 456 nm | Image:C06445_02_10.jpg|0.5/0.25µ<br> Etch depth: 652 nm<br> Resist left: 456 nm | ||
Image:C06445_02_06.jpg|1µ/0.5µ:<br> Etch depth: 855 nm<br> Resist left: 487 nm | Image:C06445_02_06.jpg|1µ/0.5µ:<br> Etch depth: 855 nm<br> Resist left: 487 nm | ||