Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions
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*Up to 1200 <sup>o</sup>C, but maximum 450 <sup>o</sup>C for III-V materials | *Up to 1200 <sup>o</sup>C, but maximum 450 <sup>o</sup>C for III-V materials | ||
**Time limits at temperatures above 700 <sup>o</sup>C: | **Time limits at temperatures above 700 <sup>o</sup>C: | ||
***700 °C: 60 | ***700 °C: 60 min. | ||
***800 °C: 30 | ***800 °C: 30 min. | ||
***900 °C: 20 | ***900 °C: 20 min. | ||
***1000 °C: 10 | ***1000 °C: 10 min. | ||
***1100 °C: 5 | ***1100 °C: 5 min. | ||
***1200 °C: 1 | ***1200 °C: 1 min. | ||
Temperature ramp: | Temperature ramp: | ||
*Up to 50 <sup>o</sup>C/min with susceptor | *Up to 50 <sup>o</sup>C/min with susceptor | ||
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|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Process gases: | Process gases: | ||
*N<sub>2</sub> | *Nitrogen (N<sub>2</sub>) | ||
*Ar | *Argon (Ar) | ||
*Forming gas (4 % H<sub>2</sub>/96 % N<sub>2</sub>) - Not connected yet | *Forming gas (4 % H<sub>2</sub>/96 % N<sub>2</sub>) - Not connected yet | ||
Purge gas: | Purge gas: | ||
*N<sub>2</sub> pro | *Nitrogen (N<sub>2</sub> pro) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
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A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used | A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used | ||
*Silicon | *Silicon | ||
*Silicon oxide and | *Silicon oxide and silicon nitride | ||
*Fused silica/quartz | *Fused silica/quartz | ||
*III-V materials | *III-V materials - Use a dedicated susceptor | ||
*Metals - Use a dedicated susceptor and ask for permission | *Metals - Use a dedicated susceptor and ask for permission | ||
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