Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions
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A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used | A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used | ||
*Silicon | *Silicon | ||
*Silicon oxide | *Silicon oxide and nitride | ||
*Silicon nitride | *Silicon nitride | ||
*Fused silica/quartz | *Fused silica/quartz | ||
*III-V materials (max 450 <sup>o</sup>C) - Use a dedicated susceptor | |||
*III-V materials ( | *Metals - Use a dedicated susceptor and ask for permission | ||
* | |||
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