Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions

@@ Line 46: / Line 46: @@
 |style="background:LightGrey; color:black"|Process Temperature
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-*0-1100 <sup>o</sup>C
+*0-1200 <sup>o</sup>C
-*III-V materials only to 450 <sup>o</sup>C
+**Time limits at temperatures above 700 <sup>o</sup>C:
-*Temperature ramp up to 300 <sup>o</sup>C/min
+***700 °C: 60 minutes
+***800 °C: 30 minutes
+***900 °C: 20 minutes
+***1000 °C: 10 minutes
+***1100 °C: 5 minutes
+***1200 °C: 1 minute
+*III-V materials  to 450 <sup>o</sup>C
+*Temperature ramp:
+**Up to 50 <sup>o</sup>C/min with susceptor
+**Up to 100 <sup>o</sup>C/min without susceptor
 |-
@@ Line 64: / Line 73: @@
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*One 50 mm or 100 mm wafer
+*200 mm wafers
-*Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide)
+*150 mm wafers
+*100 mm wafers
+*50 mm wafers
+*Small samples
 |-
-| style="background:LightGrey; color:black"|Substrate materials allowed
+|style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|