Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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[[Image:A1.JPG|thumb|400x400px|Boron Drive-in and Pre-dep furnace (A1). Positioned in cleanroom B-1]] | [[Image:A1.JPG|thumb|400x400px|Boron Drive-in and Pre-dep furnace (A1). Positioned in cleanroom B-1]] | ||
The Boron Drive-in and Pre-dep furnace (A1) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Also boron pre-deposition/doping is done furnace. Furthermore, the furnace is used for boron drive-in after the pre-deposition or after boron ion implantation. | The Boron Drive-in and Pre-dep furnace (A1) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Also boron pre-deposition/doping is done in this furnace. Furthermore, the furnace is used for boron drive-in after the pre-deposition or after boron ion implantation. | ||
The furnace is mostly used for wet and dry thermal oxidation of silicon wafers. The oxidation recipes are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature. | The furnace is mostly used for wet and dry thermal oxidation of silicon wafers. The oxidation recipes are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature. | ||