Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2: Difference between revisions
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{| | A | B|- | C| D|}Available gasses and gas chemistry | {| | A | B|- | C| D|}Available gasses and gas chemistry | ||
|ItemConfiguration= | |ItemConfiguration= | ||
* SF6: 50 sccm | |||
* O2: 50 sccm | |||
* Ar: 283 sccm | |||
* N2: 500 sccm | |||
* He: 11 sccm | |||
* CO2: (It is not in the software) | |||
|ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | |ItemComment=OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up | ||
|} | |} | ||