LabAdviser/Technology Research/Technology for CZTS-Silicon Tandem Solar Cells: Difference between revisions
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# Developing and characterizing the bottom silicon cell. | # Developing and characterizing the bottom silicon cell. | ||
# Developing technology for tunnel/barrier layers on the silicon cell. The purpose of these layers are twofold: | # Developing technology for tunnel/barrier layers on the silicon cell. The purpose of these layers are twofold: | ||
*1) At the interface electron currents from the silicon cell must be transformed into hole currents in the CZTS cell. | **1) At the interface electron currents from the silicon cell must be transformed into hole currents in the CZTS cell. | ||
*2) The interface must have a diffusion barrier to protect the silicon cell from in-diffusion of metals (particularly Cu) from the CZTS. This is a particularly challenging task. | **2) The interface must have a diffusion barrier to protect the silicon cell from in-diffusion of metals (particularly Cu) from the CZTS. This is a particularly challenging task. | ||
==Project description== | ==Project description== | ||