Specific Process Knowledge/Etch/OES: Difference between revisions
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== Optical Emission Spectroscopy == | == Optical Emission Spectroscopy == | ||
As an example, let's take the etching of silicon by fluorine in one of the dry etchers. The fluorine is supplied to the system as SF<sub>6</sub> gas that is fed to the process chamber using mass flow controllers. Driven by the RF generators (both coil and platen) the plasma will decompose the gas in a series of dissociation and ionisation reactions to form fluorine radicals F<sup>*</sup>. In the areas on the wafer that are not covered by a mask, the exposed silicon atoms will be attacked aggressively by the fluorine to form volatile SiF | '''The etch process:''' | ||
As an example, let's take the etching of silicon by fluorine in one of the dry etchers. The fluorine is supplied to the system as SF<sub>6</sub> gas that is fed to the process chamber using mass flow controllers. Driven by the RF generators (both coil and platen) the plasma will decompose the gas in a series of dissociation and ionisation reactions to form fluorine radicals F<sup>*</sup>. In the areas on the wafer that are not covered by a mask, the exposed silicon atoms will be attacked aggressively by the fluorine radical to form volatile SiF. As such, the SiF will desorp from the wafer surface and eventually get pumped away. | |||
'''The plasma:''' | |||
The plasma emits light as the gas constituents are continuously exited | |||
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