Specific Process Knowledge/Etch/OES: Difference between revisions
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* Pegasus 1 | * Pegasus 1 | ||
* Pegasus 4 | * Pegasus 4 | ||
The section below describes | The section below describes the principle behind Optical Emission Spectroscopy (OES) in relation the End Point Detection (EPD) system. | ||
== Optical Emission Spectroscopy == | |||
=fdgsdfg= | =fdgsdfg= | ||
Revision as of 13:25, 26 November 2020
Optical endpoint detection on the dry etch tools at DTU Nanolab
Several dry etch tools at DTU Nanolab are equipped with an endpoint detection system. Out of those systems only one is not of the type optical endpoint detection. The instruments are:
- ICP Metal Etch
- III-V ICP
- Pegasus 1
- Pegasus 4
The section below describes the principle behind Optical Emission Spectroscopy (OES) in relation the End Point Detection (EPD) system.
Optical Emission Spectroscopy
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| Monitored species | Wavelength (nm) | Monitored species | Wavelength (nm) | |
| Al | 308.2, 309.3, 396.1 | In | 325.6 | |
| AlCl | 261.4 | N | 674.0 | |
| As | 235.0 | N2 | 315.9, 337.1 | |
| C2 | 516.5 | NO | 247.9, 288.5, 289.3, 303.5, 304.3, 319.8, 320.7, 337.7, 338.6 | |
| CF2 | 251.9 | O | 777.2, 844.7 | |
| Cl | 741.4 | OH | 281.1, 306.4, 308.9 | |
| CN | 289.8, 304.2, 387.0 | S | 469.5 | |
| CO | 292.5, 302.8, 313.8, 325.3, 482.5, 483.5, 519.8 | Si | 288.2 | |
| F | 703.7, 712.8 | SiCl | 287.1 | |
| Ga | 417.2 | SiF | 440.1, 777.0 | |
| H | 486.1, 656.5 |