Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4: Difference between revisions

Revision as of 16:06, 16 November 2020

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Pegasus 4 - 150mm silicon oxide and silicon nitride etching

The tool is already installed and ready to process. The picoscope, the chamber are working well right now but we still have some troubles with the wafers aligner in the loadlock.

The twin Pegasi (3 and 4) have just been rolled into the lab on July 3rd 2018.

The user manual(s), quality control procedure(s) and results, user APV(s) are not available, technical information and contact information can be found in LabManager:

Equipment info in LabManager

Process information

Standard recipes

Barc etch

Hardware changes

A few hardware modifications have been made on the Pegasus 3/4 since it was installed in 2019. The changes are listed below.

Change of showerhead in 2019

Addition of Picoscope oscilloscope system for process monitoring in February 2019

Other etch processes

Continuous nanostructure etches including nano1.42

Etch processes with DUV masks

BARC etches

Isotropic etches

More processes, such as for DUV resist, are currently being developed, but they are not quite 'ready for publication' at LabAdviser so please contact Jonas (mailto:jmli@dtu.dk) for more information.

Wafer bonding

To find information on how to bond wafers or chips to a carrier wafer, click here.

Internal Nanolab Process log for Pegasus 4

Process log at Nanolab [1]

@@ Line 54: / Line 54: @@
 To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].
-=== Acceptance test ===
+'''Internal Nanolab Process log for Pegasus 4'''
-The instrument was opened for users in April 2010 when the acceptance test was signed. This was based on the performance of five standard recipes (A, B, C, D and SOI) that are further examined below. The acceptance test report is found [[Media:Pegasus_AcceptanceTest.pdf|here]].
+Process log at Nanolab [http://labintra.nanolab.dtu.dk/index.php/Main_Page/Process_Logs/bghe/Pegasus4]
-'''Characterisation of etched trenches'''
-Comparing differences in etched trenches requires a set of common parameters for each trench. Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation|'''HERE''']] to find more information about the parameters used on the DRIE-Pegasus process development.
-'''Internal Nanolab Process log for Pegasus 1'''
-Process log at Nanolab [http://labintra.nanolab.dtu.dk/index.php/Main_Page/Process_Logs/jmli/Pegasus]