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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4: Difference between revisions

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To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].


=== Acceptance test ===
'''Internal Nanolab Process log for Pegasus 4'''


The instrument was opened for users in April 2010 when the acceptance test was signed. This was based on the performance of five standard recipes (A, B, C, D and SOI) that are further examined below. The acceptance test report is found [[Media:Pegasus_AcceptanceTest.pdf|here]].
Process log at Nanolab [http://labintra.nanolab.dtu.dk/index.php/Main_Page/Process_Logs/bghe/Pegasus4]
 
'''Characterisation of etched trenches'''
 
Comparing differences in etched trenches requires a set of common parameters for each trench. Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation|'''HERE''']] to find more information about the parameters used on the DRIE-Pegasus process development.
 
 
'''Internal Nanolab Process log for Pegasus 1'''
 
Process log at Nanolab [http://labintra.nanolab.dtu.dk/index.php/Main_Page/Process_Logs/jmli/Pegasus]