Specific Process Knowledge/Etch/DRIE-Pegasus/processA/PrA-0: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processA/PrA-0 click here]'''
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Revision as of 07:43, 5 October 2020

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Process runs
Date Substrate Information Process Information SEM Images
Wafer info Exposed area Conditioning Recipe Wafer ID
2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C03991.01

2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C03991.04

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C04047.01

3/6-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C04047.04

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