Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions

Revision as of 15:15, 9 November 2009 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits →Oxide insulation analysis ← Older edit		Revision as of 15:16, 9 November 2009 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits →Surface roughness optimization Newer edit →
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	[[Image:Lesker_roughness_Bjarke.JPG\|~~1000px~~\|thumb\|Figure 1:Left: no RF bias (wafer 12) gives high roughness. Right: RF bias (Wafer 21) gives low roughness]]		[[Image:Lesker_roughness_Bjarke.JPG\|800px\|thumb\|Figure 1:Left: no RF bias (wafer 12) gives high roughness. Right: RF bias (Wafer 21) gives low roughness]]




	==Oxide insulation analysis==		==Oxide insulation analysis==