Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions

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*Any material that is accepted in the machine
*Any material that is accepted in the machine
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*HF VPE mask material 1
*Aluminium
*HF VPE mask material 2
*Aluminium oxide
*HF VPE mask material 3
*Polysilicon
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Revision as of 13:39, 2 September 2020

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Comparing silicon oxide etch methods at DTU Nanolab

There are a broad varity of silicon oxide etch methods at DTU Nanolab. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.

Compare the methods for Silicon Oxide etching

Wet Silicon Oxide etch (BHF/HF) ASE III-V RIE AOE (Advanced Oxide Etch) ICP metal IBE/IBSD Ionfab 300 HF Vapour Phase Etch
Generel description
  • Isotropic etch
  • Anisotropic etch: vertical sidewalls
  • Anisotropic etch: vertical sidewalls
  • Premarily for III-V samples
  • Anisotropic etch: vertical sidewalls
  • Anisotropic etch: almost vertical sidewalls
  • We prefer that SiO2 etch takes place in the AOE, since it is a very polymeric process an the ICP is not heating as much as the AOE.
  • Primarily for pure physical etch by sputtering with Ar-ions
  • Gas phase HF etching with ethanol as carrier
Possible masking materials
  • Photoresist
  • PolySilicon
  • Silicon nitride (LPCVD)
  • Blue film
  • Cr/Au for deeper etches (plastic beaker)
  • Photoresist
  • DUV resist
  • E-beam resist
  • Silicon
  • Silicon Nitride
  • Metals if they cover less than 5% of the wafer area
  • Photoresist
  • DUV resist
  • E-beam resist
  • Aluminum
  • Silicon
  • Silicon Nitride
  • Photoresist
  • DUV resist
  • E-beam resist
  • Silicon
  • Silicon Nitride
  • Aluminium
  • Chromium (Please try to avoid this)
  • Photoresist
  • DUV resist
  • E-beam resist
  • Si
  • Silicon Nitride
  • Aluminium
  • Chromium
  • Ti
  • Any material that is accepted in the machine
  • Aluminium
  • Aluminium oxide
  • Polysilicon
Etch rate range
  • ~75 nm/min (Thermal oxide) in BHF
  • ~90 nm/min (Thermal oxide) in SIO Etch
  • ~25 nm/min (Thermal oxide) in 5%HF
  • ~3-4µm/min in 40%HF
  • Process dependent
  • Tested range: ~20nm/min - ~250nm/min
  • Process dependent
  • Tested range: ~1nm/min - ~30nm/min
  • Process dependent
  • Tested range: ~60nm/min - ~550nm/min
  • Process dependent
  • Tested range: ~40nm/min - ~200nm/min
  • Process dependent
  • Tested once ~22nm/min
  • Sample and load dependent
  • Expected range: 12 - 175 nm/min
Substrate size
  • #1-25 100mm wafers in our 100mm bath
  • What can be fitted in a plastic beaker
  • As many small samples as can be fitted on the 100mm carrier (bad/no cooling!).
  • #1 100mm wafer (or smaller with carrier)
  • #1 150mm wafer (only when set up for 150mm)
  • Up to 20cm in diameter
  • As many small samples as can be fitted on a 100mm wafer
  • #1 50 mm wafer fitted on a 100mm wafer
  • #1 100 mm wafer
  • #1 150 mm wafers (only when the system is set up to 150mm)
  • As many small samples as can be fitted on a 150mm wafer
  • #1 50 mm wafer fitted on a 150mm wafer
  • #1 100 mm wafer fitted on a 150nm wafer
  • #1 150 mm wafers
  • As many samples as can be securely fitted on a up to 200mm wafer
  • #1 50 mm wafer with special carrier
  • #1 100 mm wafer with special carrier
  • #1 150 mm wafers with special carrier
  • #1 200 mm wafer
  • Pieces
  • #1 50 mm wafer
  • #1 100 mm wafer
  • #1 150 mm wafer
Allowed materials

In the dedicated bath:

  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • Blue film

In a plastic beaker:

  • No limits cross contamination wise