Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions
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==Film quality optimization== | ==Film quality optimization== | ||
By Bjarke Thomas Dalslet @Nanotech.dtu.dk | ''By Bjarke Thomas Dalslet @Nanotech.dtu.dk'' | ||
The Lesker CMS 18 sputter system can produce films in a wide range of qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing. | The Lesker CMS 18 sputter system can produce films in a wide range of qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing. |
Revision as of 13:13, 9 November 2009
Film quality optimization
By Bjarke Thomas Dalslet @Nanotech.dtu.dk
The Lesker CMS 18 sputter system can produce films in a wide range of qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing.
Strain estimations was done on 30 nm NiFe thin films using low angle x-ray diffraction, for various substrates. It was found that the strain of the film influenced the resistance (R) and anisotropic magneto resistance (AMR) of the films (this relationship is also documented in literature); A Ta interface layer reduced R and increased AMR on both Si and SiO substrates while reducing strain.
This study was then done on 30 nm NiFe thin films deposited on 3 nm Ta on top of a SiO substrate, using R and AMR as an indication of strain. As seen in the tables, applying a substrate bias increases AMR and conductance (1/R). An equivalent effect is seen when heating the substrate during deposition. This heating can also be done after deposition without loosing the effect.