Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
m →Chromium deposition: added info on deposition rate |
→Chromium deposition: adding section w cluster sputterer |
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]]) | ||
! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]]) | |||
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|E-beam and sputter deposition of Chromium | |E-beam and sputter deposition of Chromium | ||
|E-beam deposition of Chromium | |E-beam deposition of Chromium | ||
|Sputter deposition of Chromium | |||
|Sputter deposition of Chromium | |Sputter deposition of Chromium | ||
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|RF Ar clean | |RF Ar clean | ||
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|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
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|10Å to 1µm* | |10Å to 1µm* | ||
|10Å to 1000 Å | |10Å to 1000 Å | ||
|at least up to 200 nm | |||
|at least up to 200 nm | |at least up to 200 nm | ||
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|10 Å/s | |10 Å/s | ||
|Depends on process parameters. At least up to 2 Å/s. See process log. | |Depends on process parameters. At least up to 2 Å/s. See process log. | ||
|Depends on process parameters. | |||
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*1x6" wafers | *1x6" wafers | ||
*Smaller pieces/wafers | *Smaller pieces/wafers | ||
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*up to 10x4" wafers or | |||
*up to 10x6" wafers or | |||
* many smaller samples | |||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||