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RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.
 
uploaded a new version of "Image:RIE1 150nitride bgenitr 3.5min.tif": RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been
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Revision as of 10:17, 21 September 2009

RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.

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current10:35, 21 September 2009Thumbnail for version as of 10:35, 21 September 20091,024 × 768 (71 KB)Pvl (talk | contribs)RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.
10:24, 21 September 2009Thumbnail for version as of 10:24, 21 September 20091,024 × 768 (71 KB)Pvl (talk | contribs)RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.
10:17, 21 September 2009No thumbnail1,024 × 768 (769 KB)Pvl (talk | contribs)RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.
15:03, 7 September 2009No thumbnail1,024 × 768 (769 KB)Pvl (talk | contribs)RIE1 etch profile - 150 nm silicon nitride - recipe "BGE_NITR" (pressure 42 mTorr) - etchtime 3,5 min. The structures are made with e-beam lithography, and the Al etch mask has been removed. Wafer tiltet 45 degrees.

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