Specific Process Knowledge/Wafer cleaning/7-up & Piranha: Difference between revisions
Line 26: | Line 26: | ||
|80 <sup>o</sup>C | |80 <sup>o</sup>C | ||
|~70 <sup>o</sup>C the chemicals will heat up to working temperature during mixing, '''therefore be careful!''' | |~70 <sup>o</sup>C the chemicals will heat up to working temperature during mixing, '''therefore be careful!'''First ad H2SO4 then H2O2 | ||
|- | |- | ||
|'''Process time''' | |'''Process time''' |
Revision as of 13:11, 17 September 2009
Cleaning of wafers or masks
Cleaning of wafers or masks with sulphuric acid can be done either in a dedicated tank "7-up" or in the fume hood in a beaker "Piranha" Both 7-up and Piranha removes heavy organics. Always use one of these after KOH to remove alkali ions before further processing. 7-up and Piranha are also used as cleaning solutions after stripping resist.
Comparing data for "7-up" and Piranha
"7-up" | Piranha | |
---|---|---|
General description |
Cleaning of wafers or masks using the dedicated tanks. There are one tank for masks and glass wafers and one for 4-6" Si wafers in cleanroom 4 and one tank in cleanroom 3 for 4" Si wafers only. |
Cleaning of wafers using a beaker in the fumehood in cleanroom 2. Used for glass wafers or wafers with metal or other materials that you are not allowed to put in the 7-up for wafers. |
Chemical solution | 98% Sulfuric acid and Ammonium sulfate | 98% Sulfuric acid and Hydrogen peroxide 4:1 add HO to HSO |
Process temperature | 80 oC | ~70 oC the chemicals will heat up to working temperature during mixing, therefore be careful!First ad H2SO4 then H2O2 |
Process time |
10 min. |
10 min. |
Allowed materials |
Dependent on which bath is used, look at the text in the pictures. |
All materials (in beaker). |
Batch size |
1-19/25 4" wafers or 4 masks at a time |
1-5 4" wafer at a time |
Size of substrate |
4-6" wafers |
2-4" wafers |