Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Black silicon on Demand: Difference between revisions
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On DRIE-Pegasus 2, the formation and controllabilty of BSi in the CORE sequence is different from how BSi presents itself in the FC-based sequences. The schematic illustration of BSi formation in the Bosch process and BSi-free in the CORE sequence is shown below. | On DRIE-Pegasus 2, the formation and controllabilty of BSi in the CORE sequence is different from how BSi presents itself in the FC-based sequences. The schematic illustration of BSi formation in the Bosch process and BSi-free in the CORE sequence is shown below. | ||
[[File:Figure_2.png|400px | [[File:Figure_2.png|400px]] | ||
Example of the CORE recipe for BSi | Example of the CORE recipe for BSi | ||
[[File:Bsi.png|400px | [[File:Bsi.png|400px]] | ||
Silicon wafers are prepared with 1.5 μm thick resist patterns (AZ MIR 701 DUV resist from MicroChemicals) and exposed using a maskless aligner (MLA150, Heidelberg) to create patterns above 400 nm. Below are some SEM images of BSi nanostructures achieved by the modified CORE process: | Silicon wafers are prepared with 1.5 μm thick resist patterns (AZ MIR 701 DUV resist from MicroChemicals) and exposed using a maskless aligner (MLA150, Heidelberg) to create patterns above 400 nm. Below are some SEM images of BSi nanostructures achieved by the modified CORE process: | ||