Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Black silicon on Demand: Difference between revisions
No edit summary |
No edit summary |
||
| Line 16: | Line 16: | ||
Silicon wafers are prepared with 1.5 μm thick resist patterns (AZ MIR 701 DUV resist from MicroChemicals) and exposed using a maskless aligner (MLA150, Heidelberg) to create patterns above 400 nm. Below are some SEM images of BSi nanostructures achieved by the modified CORE process: | Silicon wafers are prepared with 1.5 μm thick resist patterns (AZ MIR 701 DUV resist from MicroChemicals) and exposed using a maskless aligner (MLA150, Heidelberg) to create patterns above 400 nm. Below are some SEM images of BSi nanostructures achieved by the modified CORE process: | ||
[[File:Figure 8.png | [[File:Figure 8.png|left|thumb|'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''']] | ||