Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions
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[[File:Fig 13a.png|800px]] | [[File:Fig 13a.png|800px|thumb]] | ||
'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | '''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | ||
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[[File:Fig 13d - 1.png|800px]] | [[File:Fig 13d - 1.png|800px]] | ||
'''''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence.(Left) Grating with 80 nm periodicity. (Right) RIE lag test structure between 30 and 100 nm.''''' | |||
'''''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''''' | |||