Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions
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[[File:Fig 13a.png|800px]] | [[File:Fig 13a.png|800px]] | ||
|'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | |||
'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | |||
[[File:Fig 13b.png|800px]] | [[File:Fig 13b.png|800px]] | ||
'''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''' | '''''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''''' | ||
[[File:Fig 13c.png|800px]] | [[File:Fig 13c.png|800px]] | ||
'''Submicron silicon pillars derived from the fine-tuned CORE sequence.''' | '''''Submicron silicon pillars derived from the fine-tuned CORE sequence.''''' | ||
[[File:Fig 13d - 1.png|800px]] | [[File:Fig 13d - 1.png|800px]] | ||
'''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''' | '''''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''''' | ||