Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions
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The CORE sequence (meaning Clear, Oxidize, Remove and Etch) is a fluorocarbon-free directional plasma etch procedure that enables a higher selectivity, creates pattern independence of etching profiles and works excellent at room temperature. The CORE process resembles the well-known SF<sub>6</sub>-based Bosch process, but the usual C<sub>4</sub>F<sub>8</sub> inhibitor is replaced by O<sub>2</sub> oxidation with self-limiting characteristics. Therefore the CORE result is similar to Bosch, however has the advantage of preventing the pile-up of fluorocarbon deposits at the topside of deep-etched or nano-sized features. At the same time, process drift is minimized as the reactor wall is staying perfectly clean. The CORE process has shown an excellent performance in high aspect ratio (3D) nanoscale structures with an accurate and controllable etch rate between 1 and 50 nm min<sup>−1</sup> (and SiO<sub>2</sub>-selectivity of ca. 35) using the etch-tool in the RIE-mode. By adding the ICP source (DRIE-mode), a directional etch rate up to 1 μm min<sup>−1</sup> (at 50 sccm SF<sub>6</sub> flow) and selectivity >200 for SiO<sub>2</sub> is possible. | The CORE sequence (meaning Clear, Oxidize, Remove and Etch) is a fluorocarbon-free directional plasma etch procedure that enables a higher selectivity, creates pattern independence of etching profiles and works excellent at room temperature. The CORE process resembles the well-known SF<sub>6</sub>-based Bosch process, but the usual C<sub>4</sub>F<sub>8</sub> inhibitor is replaced by O<sub>2</sub> oxidation with self-limiting characteristics. Therefore the CORE result is similar to Bosch, however has the advantage of preventing the pile-up of fluorocarbon deposits at the topside of deep-etched or nano-sized features. At the same time, process drift is minimized as the reactor wall is staying perfectly clean. The CORE process has shown an excellent performance in high aspect ratio (3D) nanoscale structures with an accurate and controllable etch rate between 1 and 50 nm min<sup>−1</sup> (and SiO<sub>2</sub>-selectivity of ca. 35) using the etch-tool in the RIE-mode. By adding the ICP source (DRIE-mode), a directional etch rate up to 1 μm min<sup>−1</sup> (at 50 sccm SF<sub>6</sub> flow) and selectivity >200 for SiO<sub>2</sub> is possible. | ||
'''The CORE recipe is shown as below''' | '''The CORE recipe is shown as below''' | ||
[[File:CORE.png|800px]] | [[File:CORE.png|800px]] | ||
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Below are some SEM images of the silicon nanostructures achieved by the CORE process: | Below are some SEM images of the silicon nanostructures achieved by the CORE process: | ||
'''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''' | '''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | ||
[[File:Fig 13a.png|800px]] | [[File:Fig 13a.png|800px]] | ||
'''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.' | '''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''' | ||
'''Submicron silicon pillars derived from the fine-tuned CORE sequence.''' | |||
'''Submicron silicon pillars derived from the fine-tuned CORE sequence.' | |||
'''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''' | |||
Revision as of 14:45, 10 May 2020
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The CORE sequence (meaning Clear, Oxidize, Remove and Etch) is a fluorocarbon-free directional plasma etch procedure that enables a higher selectivity, creates pattern independence of etching profiles and works excellent at room temperature. The CORE process resembles the well-known SF6-based Bosch process, but the usual C4F8 inhibitor is replaced by O2 oxidation with self-limiting characteristics. Therefore the CORE result is similar to Bosch, however has the advantage of preventing the pile-up of fluorocarbon deposits at the topside of deep-etched or nano-sized features. At the same time, process drift is minimized as the reactor wall is staying perfectly clean. The CORE process has shown an excellent performance in high aspect ratio (3D) nanoscale structures with an accurate and controllable etch rate between 1 and 50 nm min−1 (and SiO2-selectivity of ca. 35) using the etch-tool in the RIE-mode. By adding the ICP source (DRIE-mode), a directional etch rate up to 1 μm min−1 (at 50 sccm SF6 flow) and selectivity >200 for SiO2 is possible.
The CORE recipe is shown as below
The CORE cycle design rules and optimized recipe for the etch rate fixed at 15 nm\min Rule 1: 2 min E-time needs 2 s O-time. Every 2 min extra E-time will need 1 s extra O-time until a maximum of 14 min E-time. Rule 2: Every second of O-time needs at least 3 s R-time (for 8 min E-time). Rule 3: The undercut is roughly half of the gained etch depth per CORE cycle.
Below are some SEM images of the silicon nanostructures achieved by the CORE process:
Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.
Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°. Submicron silicon pillars derived from the fine-tuned CORE sequence.
Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.