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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions

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→Deposition of silicon nitride: removed specific reference to old Lesker where now we have more options
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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
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→Comparison of LPCVD, PECVD and Lesker sputter system for silicon nitride deposition: Added sputter-system metal-nitridePC3 and metal-oxide PC1
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*[[/Deposition of silicon nitride using Lesker sputter system|Nitride deposition using Lesker sputter system]]
*[[/Deposition of silicon nitride using Lesker sputter system|Nitride deposition using Lesker sputter system]]


==Comparison of LPCVD, PECVD and Lesker sputter system for silicon nitride deposition==
==Comparison of LPCVD, PECVD, and sputter systems for silicon nitride deposition==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|LPCVD]]
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|LPCVD]]
![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]
![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Nitride(PC3) and Sputter-System Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputter system]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputter system]]
|-
|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Low Pressure Chemical Vapour Deposition (LPCVD furnace process)
|
|Plasma Enhanced Chemical Vapour Deposition (PECVD process)
*Low Pressure Chemical Vapour Deposition (LPCVD furnace process)
|Reactive sputtering
|
*Plasma Enhanced Chemical Vapour Deposition (PECVD process)
|
*Reactive sputtering
*Pulsed DC reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
|*Reactive sputtering
|-
|-


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*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
Silicon nitride can be doped with boron or phosphorus  
Silicon nitride can be doped with boron or phosphorus  
|Unknown
|
*Si<sub>x</sub>N<sub>y</sub> (Sputter-System Metal-Nitride(PC3))
*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub> (Sputter-System Metal-Oxide(PC1))
Tunable composition
|
*Unknown
|-
|-


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|
|
*~40 nm - 10 µm
*~40 nm - 10 µm
|limited by process time.  
|
Deposition rate is ~1.7nm/min
*limited by process time.  
*Deposition rate likely faster than Sputter-System (Lesker)
 
|
*limited by process time.
*Deposition rate ~ 1-5 nm/min
|-
|-


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!Process temperature
!Process temperature
|
|
*Stoichiometric nitride: 780 <sup>o</sup>C - 800 <sup>o</sup>C
*Stoichiometric nitride: 780 °C - 800 °C
*Silicon rich (low stress) nitride: 810 <sup>o</sup>C - 845 <sup>o</sup>C
*Silicon rich (low stress) nitride: 810 °C - 845 °C
|
|
*300 <sup>o</sup>C
*300 °C
|Room temperature (higher temperature possible)
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*Up to 600 °C
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*Up to 400 °C
|-
|-


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|
|
*Less good
*Less good
|yes, but amount unknown
|
*some step coverage possible, especially by HIPIMS
|
*some step coverage possible but amount unknown
|-
|-


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*Less dense film
*Less dense film
*Incorporation of hydrogen in the film
*Incorporation of hydrogen in the film
|
*Deposition on one side of the substrate
*Less dense film
*Properties including density tunable (requires process development)
|
|
*Deposition on one side of the substrate
*Deposition on one side of the substrate
*unknown quality
*unknown quality
*likely O-contamination
|-
|-


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|
|
*Dependent on recipe: ~1-10 Å/min
*Dependent on recipe: ~1-10 Å/min
|Unknown
|
*Unknown
|
*Unknown
|-
|-


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!BHF etch rate
!BHF etch rate
|
|
*Very low
*Very low ([[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride|more info here]])
|
|
*Very high compared the LPCVD nitride
*Very high compared the LPCVD nitride ([[Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride|more info here]])
|Unknown
|  
*Unknown
|
*Unknown
|-
|-


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*1 150 mm wafer  
*1 150 mm wafer  
Depending on what PECVD you use
Depending on what PECVD you use
|
*many smaller samples
*Up to 10*100 mm or 150 mm wafers
|
|
*Several smaller samples
*Several smaller samples
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*III-V materials (in PECVD4)
*III-V materials (in PECVD4)
*Small amount of metals (in PECVD3)
*Small amount of metals (in PECVD3)
|Any
|
*Almost any as long as they do not outgas and are not very toxic, see cross-contamination sheets
|
*Any
|-
|-
|}
|}
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