Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions
→Comparison between sputtering and ALD methods for deposition of Titanium Nitride.: added Sputter-system metal-nitride PC3 |
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![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] | ![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] | ||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Nitride (PC3)]] | ||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] | |||
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*Atomic Layer Deposition | *Atomic Layer Deposition | ||
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* | *Reactive sputtering | ||
*Pulsed DC reactive sputtering | |||
*Reactive HIPIMS (high-power impulse magnetron sputtering) | |||
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*Reactive sputtering | |||
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*TiN | *TiN | ||
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*TiN (can be tuned) | |||
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*TiN (can be tuned) | *TiN (can be tuned) | ||
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!Film Thickness | !Film Thickness | ||
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* | * 0 nm - 50 nm | ||
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* | * few nm - ? (hundreds of nm) | ||
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* few nm - 200 nm | |||
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* 0.0173 nm/cycle on a flat sample | * 0.0173 nm/cycle on a flat sample | ||
* 0.0232 nm/cycle on a high aspect ratio structures | * 0.0232 nm/cycle on a high aspect ratio structures | ||
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*not known, depends partly if 3" or 4" target is used. Expected to be faster than the old Sputter-System(Lesker) | |||
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* up to 0.0625 nm/s on a flat sample | * up to 0.0625 nm/s on a flat sample | ||
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*Very good | *Very good | ||
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*not known yet | |||
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*Not investigated | *Not investigated | ||
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!Process Temperature | !Process Temperature | ||
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* 450 | * 450 °C | ||
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* Up to 600 °C | |||
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* 400 | * Up to 400 °C | ||
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*1-5 100 mm wafers | *1-5 100 mm wafers | ||
*1-5 150 mm wafer | *1-5 150 mm wafer | ||
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*Many small samples | |||
*Up to 10x100 mm or 150 mm wafers | |||
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*Several small samples | *Several small samples | ||
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*Metals | *Metals | ||
*III-V materials (use dedicated carrier wafer) | *III-V materials (use dedicated carrier wafer) | ||
*Almost anything that is not toxic | *Almost anything that is not toxic and does not outgas | ||
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*Silicon | |||
*Silicon oxide, silicon nitride | |||
*Quartz/fused silica | |||
*Metals | |||
*III-V materials (use dedicated carrier wafer) | |||
*Almost anything that is not toxic | |||
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Revision as of 10:58, 23 April 2020
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Deposition of Titanium Nitride
Thin films of Titanium Nitride (TiN) can be deposited by either ALD or reactive sputtering methods. If sputtering method is used the target is Ti and nitrogen (N2) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. The process information is available below:
Comparison between sputtering and ALD methods for deposition of Titanium Nitride.
ALD2 | Sputter-System Metal-Nitride (PC3) | Sputter-System(Lesker) | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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