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Specific Process Knowledge/Thin film deposition: Difference between revisions

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Choose material to deposit: small rearrangement
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[[/Deposition of Alumina|Aluminium Oxide (Al<sub>2</sub>O<sub>3</sub>)]]<br/>
[[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|Barium titanate (BaTiO<sub>3</sub>)]]<br/>
[[/Lesker|Chromium Oxide (Cr<sub>2</sub>O<sub>3</sub>)]]<br/>
[[/Deposition of Hafnium Oxide|Hafnium Oxide (HfO<sub>2</sub>)]]<br/>
[[/Deposition of Silicon Oxide|Silicon Oxide (SiO<sub>2</sub>)]]<br/>
[[/Deposition of Silicon Oxide|Silicon Oxide (SiO<sub>2</sub>)]]<br/>
[[/Deposition of Titanium Oxide|Titanium Oxide (TiO<sub>2</sub>)]]<br/>
[[/Deposition of Titanium Oxide|Titanium Oxide (TiO<sub>2</sub>)]]<br/>
[[/Deposition of Alumina|Aluminium Oxide (Al<sub>2</sub>O<sub>3</sub>)]]<br/>
[[/Lesker|Tantalum Oxide (Ta<sub>2</sub>O<sub>5</sub>)]]<br/>
[[/Lesker|Tantalum Oxide (Ta<sub>2</sub>O<sub>5</sub>)]]<br/>
[[/Lesker|Chromium Oxide (Cr<sub>2</sub>O<sub>3</sub>)]]<br/>
[[/Deposition of Hafnium Oxide|Hafnium Oxide (HfO<sub>2</sub>)]]<br/>


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[[/Lesker|AlCu]]<br/>
[[/Lesker|AlCu]]<br/>
[[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|BaTiO<sub>3</sub>]] (Barium titanate)<br/>
[[/Lesker|CoFe]]<br/>
[[/Lesker|CoFe]]<br/>
[[/Lesker|CuTi]]<br/>
[[/Lesker|CuTi]]<br/>
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[[/Deposition of NiV|NiV]] alloy <br/>
[[/Deposition of NiV|NiV]] alloy <br/>
[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/>
[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/>
And an electroceramic:
[[/Lesker|YSZ]] (Yttrium stabilized zirconia)<br/>
[[/Lesker|YSZ]] (Yttrium stabilized zirconia)<br/>