Jump to content

Specific Process Knowledge/Thin film deposition: Difference between revisions

Eves (talk | contribs)
Reet (talk | contribs)
Choose material to deposit: added materials for cluster sputterer
Line 54: Line 54:
[[/Deposition of Titanium Nitride|Titanium Nitride]] - ''conductive ceramics'' <br/>
[[/Deposition of Titanium Nitride|Titanium Nitride]] - ''conductive ceramics'' <br/>
[[/Deposition of Aluminium Nitride| Aluminum Nitride (Al<sub>x</sub>N<sub>y</sub>)]]<br/>
[[/Deposition of Aluminium Nitride| Aluminum Nitride (Al<sub>x</sub>N<sub>y</sub>)]]<br/>


|style="background: LightGray"|
|style="background: LightGray"|
[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/>
[[/Deposition of NiV|NiV]] alloy <br/>
[[/Lesker|AlCu]]<br/>
[[/Lesker|AlCu]]<br/>
[[/Lesker|CoFe]]<br/>
[[/Lesker|CoFe]]<br/>
Line 64: Line 61:
[[/Lesker|FeMn]]<br/>
[[/Lesker|FeMn]]<br/>
[[/Lesker|MnIr]]<br/>
[[/Lesker|MnIr]]<br/>
[[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|NbTi]] <br/>
[[/Lesker|NiCo]]<br/>
[[/Lesker|NiCo]]<br/>
[[/Deposition of NiFe|NiFe]]<br/>
[[/Deposition of NiFe|NiFe]]<br/>
[[/Lesker|YSZ (Yttrium stabilized Zirconium)]]<br/>
[[/Deposition of NiV|NiV]] alloy <br/>
[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/>
[[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|BaTiO<sub>3</sub>]] (Barium titanate)<br/>
[[/Lesker|YSZ (Yttrium stabilized zirconia)]]<br/>


|style="background: #DCDCDC"|
|style="background: #DCDCDC"|