Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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|style="background:LightGrey; color:black"|Deposition of silicon nitride | |style="background:LightGrey; color:black"|Deposition of silicon nitride | ||
|style="background:WhiteSmoke; color:black"|Stoichiometry: | |style="background:WhiteSmoke; color:black"|Stoichiometry: | ||
*Si<sub>3</sub>N<sub>4</sub> | *Si<sub>3</sub>N<sub>4</sub> (only new nitride furnace at the moment) | ||
*SRN (old nitride furnace, only 4" wafers) | *SRN (only old nitride furnace, only 4" wafers) | ||
Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride | Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride | ||
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|style="background:LightGrey; color:black"|Nitride thickness uniformity | |style="background:LightGrey; color:black"|Nitride thickness uniformity | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
New nitride furnace: | New nitride furnace (Si<sub>3</sub>N<sub>4</sub>): | ||
*Uniformity within wafer: <3 % | *Uniformity within wafer: <3 % | ||
*Wafer-to-wafer uniformity: <3 % | *Wafer-to-wafer uniformity: <3 % | ||
*Run-to-run uniformity: <3 % | *Run-to-run uniformity: <3 % | ||
Old nitride furnace: | Old nitride furnace (SRN): | ||
*Uniformity within wafer: < | *Uniformity within wafer: <4 % | ||
*Wafer-to-wafer uniformity: <4% | *Wafer-to-wafer uniformity: <4% | ||
*Run-to-run uniformity: | *Run-to-run uniformity: <3 % | ||
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*780- | *780-845 <sup>o</sup>C | ||
The process temperature depends on the actual process | The process temperature depends on the actual process and vary over the furnace tube | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *120-200 mTorr | ||
The process pressure depends on the actual process | The process pressure depends on the actual process | ||
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): | *Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): 30-80 sccm | ||
*Ammonia (NH<math>_3</math>): | *Ammonia (NH<math>_3</math>): 20-120 sccm | ||
The gas flows depend on the actual process | The gas flows depend on the actual process | ||
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*1-25 4" or 6" wafers per run | *1-25 4" or 6" wafers per run | ||
Old nitride furnace: | Old nitride furnace: | ||
*1- | *1-17 4" wafers per run | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers (new wafers | *Silicon wafers (new wafers or RCA cleaned wafers) | ||
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
**from furnaces in stack A or B in cleanroom 2 | **from furnaces in stack A or B in cleanroom 2 | ||
* | *Pure quartz (fused silica) wafers (RCA cleaned) | ||
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