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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
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Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,763 edits
→Comparison of the methods for deposition of Silicon: moved PECVD column next to LPCVD column
Line 33: Line 33:
!  
!  
! 4" and 6" Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySi]])
! 4" and 6" Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySi]])
! PECVD ([[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]])
! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! PECVD ([[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|Cluster-based sputter system]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description


|LPCVD (low pressure chemical vapour deposition) of polysilicon
|LPCVD (low pressure chemical vapour deposition) of a-Si and poly-Si
|Plasma Enhanced Chemical Vapor Deposition of Si


| Sputter deposition of Si.
| Sputter deposition of Si.
Line 48: Line 50:


| Sputter deposition of Si.  
| Sputter deposition of Si.  
|Plasma Enhanced Chemical Vapor Deposition.
| Sputter deposition of Si.  
|-
|-


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Doping facility
! Doping facility
|Can be doped with boron or phosphorus during deposition
|Yes, B (boron) and P (phosphorus)
|Yes, B and P
|None
|None
|None
|None
|None
|None
|None
|Yes, B and P
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Pre-clean
! Pre-clean
|New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned
|New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned
|RF Ar clean
| 
|RF Ar clean available
|None
|None
|RF Ar clean
|RF Ar clean available
| 
|RF Ar clean available
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Layer thickness
! Layer thickness
|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|~50Å to 2µm, if thicker layers are needed please ask the furnace team.
|10Å to about 3000Å
|few nm to ~300nm
|few tens of Å to about 3000 Å
|No defined limits
|No defined limits
|
|
|few nm to ~500nm
|few nm to >200 nm
|few nm to ?
|-
|-


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*undoped, boron doped:~100Å/min
*undoped, boron doped:~100Å/min
*Phosphorous doped:~20Å/min
*Phosphorous doped:~20Å/min
|~6Å/s can probably be higher
|
|
In the order of 1 Å/s, but dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
On the order of 1 Å/s dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]]
| About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
| About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]
| Depends on process parameters, roughly 1 Å/s.  
| Depends on process parameters, roughly 0.2-2 Å/s.
|~6Å/s can probably be higher
|Depends on process parameters
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Process temperature
! Process temperature
|560 <sup>o</sup>C (amorph) and 620 <sup>o</sup>C (poly)
|560 °C (amorphous) and 620 °C (poly)
|?
|300 °C
|Platen: 5-60 <sup>o</sup>C
|close to room temperature
|Wafers can be heated to 100-200°C
|Platen: 5-60 °C
|300 <sup>o</sup>C
|Wafers can be heated to 400 °C
|Wafers can be heated to 600 °C
 
|-
|-


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! Step coverage
! Step coverage
|Good
|Good
|.
|Medium
|Medium
|Not known
|Not known
|
|Medium
|Medium
|Medium - may be possible to improve using HIPIMS
|-
|-


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! Adhesion
! Adhesion
|Good for fused silica, silicon oxide, silicon nitride, silicon
|Good for fused silica, silicon oxide, silicon nitride, silicon
|.
|Not tested, but do not deposit on top of silicon
|&nbsp;
|Not tested
|Not tested
|&nbsp;
|&nbsp;
|Not tested, but do not deposit on top of silicon
|&nbsp;
|-
|-


Line 119: Line 130:
*1-30 wafers (4" furnace)
*1-30 wafers (4" furnace)
*1-25 wafes (6" furnace)
*1-25 wafes (6" furnace)
|
* Several small samples
* 1-2x 50 mm wafer
* 1x 100 mm wafer
* 1x 150 mm wafer
|
|
*24x 2" wafers or  
*24x 2" wafers or  
Line 133: Line 149:
* smaller pieces
* smaller pieces
|
|
* Several small samples
*Up to 10x6" or 4" wafers
* 1-2x 50 mm wafer
*many smaller pieces
* 1x 100 mm wafer
* 1x 150 mm wafer


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
Line 146: Line 160:
**  from the A, B and E stack furnaces  
**  from the A, B and E stack furnaces  
* Quartz/fused silica wafers (RCA cleaned)  
* Quartz/fused silica wafers (RCA cleaned)  
|
*See the cross contamination sheets
|   
|   
* Silicon wafers
* Silicon wafers
Line 153: Line 169:
*Same materials as on the allowed materials below
*Same materials as on the allowed materials below
|
|
* Silicon wafers
* Almost any that does not degas, see cross-contamination sheet
* Quartz wafers
* Pyrex wafers
|
|
See the cross contamination sheet for PECVD3
*Almost any that does not degas, see cross-contamination sheets


|-
|-
Line 163: Line 177:
! Allowed material  
! Allowed material  


| Only those above (under allowed substrates).
| *Only those above (under allowed substrates).
|
*See the cross contamination sheets
|     
|     
* Silicon oxide
* Silicon oxide
Line 174: Line 190:
|
|
* Silicon, silicon oxides, silicon nitrides
* Silicon, silicon oxides, silicon nitrides
* Metals from the +list
* Metals from the +list and the -list on the cross-contamination sheet
* Metals from the -list
* Alloys from the above list
* Alloys from the above list
* Stainless steel
* Stainless steel
Line 184: Line 199:
* Capton tape  
* Capton tape  
|     
|     
* Silicon oxide
*Almost any that does not degas, see the cross-contamination sheet
* Silicon (oxy)nitride
* Photoresist
* Metals
|
|
See the cross contamination sheet for PECVD3
*Almost any that does not degas, see the cross-contamination sheets
|-
|-


Line 196: Line 208:
! Comment
! Comment
|
|
|Only in PECVD3
|  
|  
| The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD.
| The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD.
|
|  
|  
|Only in PECVD3
|}
|}
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