Specific Process Knowledge/Wafer cleaning/Post CMP Cleaner: Difference between revisions

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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>Polisher/Lapper</b>
|style="background:WhiteSmoke; color:black"|<b>Post CMP Cleaner</b>
<!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> -->
<!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> -->
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!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
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|style="background:LightGrey; color:black"|  
Polishing of
Cleaning of
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|style="background:WhiteSmoke; color:black"|
*Silicon
*Samples from the CMP
*SiO2
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*Purpose 1
*Purpose 1
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*Performance range -->
*Performance range -->
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
|style="background:LightGrey; color:black"|Mechanical Cleaning
|style="background:LightGrey; color:black"|Polishing liquid
|style="background:WhiteSmoke; color:black"|
*SF1 Polishing Fluid
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|style="background:LightGrey; color:black"|Polishing cloths
|style="background:WhiteSmoke; color:black"|
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*Chemcloth Polishing Cloths
*Brush Cleaning
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|style="background:LightGrey; color:black"|Rotation
|style="background:LightGrey; color:black"|Power
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*Plate
*Megasonic Power from 0-40 W (in water)
*Head/Puck
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|style="background:LightGrey; color:black"|Arm sweep
|style="background:LightGrey; color:black"|Arm sweep
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*Polishing: 20% (inner) - 100% (outer)
*4" and 6" (20x20mm and 2" run with a 4" sweep)
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
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|style="background:WhiteSmoke; color:black"|
*Silicon
*Silicon
*Polysilicon
*Silicon Oxide
*Glass/Quartz
*Glass/Quartz
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Revision as of 08:33, 21 April 2020

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Post CMP Cleaner)

The Post CMP CLeaner in cleanroom A-5

The post CMP Cleaner is designed for removing slurry residues from polishing wafers. After the Post CMP cleaner is the recommended cleaning tool after using the Polisher CMP.


The user manual, user APV, technical information and contact information can be found in LabManager:

The Post CMP Cleaner in LabManager

Equipment performance and process related parameters

Equipment Post CMP Cleaner
Purpose

Cleaning of

  • Samples from the CMP
Performance 20x20mm substrate
  • Removal rate: 400nm/min
  • Thickness accuracy: +/- ? µm
  • Thickness homogeneity: +/- ? µm
  • Roughness: +/- ? µm
100mm substrate
  • Removal rate: ~ 60 nm/min
  • Thickness accuracy: ? µm
  • Thickness homogeneity: ? µm
  • Roughness: +/- ? µm
Mechanical Cleaning
  • Brush Cleaning
Power
  • Megasonic Power from 0-40 W (in water)
Arm sweep
  • 4" and 6" (20x20mm and 2" run with a 4" sweep)
Substrates Sample size
  • one 20x20mm piece
  • one 50 mm wafer
  • one 2" wafer
  • one 100 mm wafer
  • one 150 mm wafer
Allowed materials
  • Silicon
  • Polysilicon
  • Silicon Oxide
  • Glass/Quartz