Specific Process Knowledge/Wafer cleaning/Post CMP Cleaner: Difference between revisions

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@@ Line 22: / Line 22: @@
 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
-|style="background:WhiteSmoke; color:black"|<b>Polisher/Lapper</b>
+|style="background:WhiteSmoke; color:black"|<b>Post CMP Cleaner</b>
 <!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> -->
 |-
 !style="background:silver; color:black;" align="center" width="60"|Purpose
 |style="background:LightGrey; color:black"|
-Polishing of
+Cleaning of
 |style="background:WhiteSmoke; color:black"|
-*Silicon
+*Samples from the CMP
-*SiO2
 <!-- |style="background:WhiteSmoke; color:black"|
 *Purpose 1
@@ Line 57: / Line 56: @@
 *Performance range -->
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
+|style="background:LightGrey; color:black"|Mechanical Cleaning
-|style="background:LightGrey; color:black"|Polishing liquid
-|style="background:WhiteSmoke; color:black"|
-*SF1 Polishing Fluid
-|-
-|style="background:LightGrey; color:black"|Polishing cloths
 |style="background:WhiteSmoke; color:black"|
-*Chemcloth Polishing Cloths
+*Brush Cleaning
 |-
-|style="background:LightGrey; color:black"|Rotation
+|style="background:LightGrey; color:black"|Power
 |style="background:WhiteSmoke; color:black"|
-*Plate
+*Megasonic Power from 0-40 W (in water)
-*Head/Puck
 |-
 |style="background:LightGrey; color:black"|Arm sweep
 |style="background:WhiteSmoke; color:black"|
-*Polishing: 20% (inner) - 100% (outer)
+*4" and 6" (20x20mm and 2" run with a 4" sweep)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
@@ Line 92: / Line 85: @@
 |style="background:WhiteSmoke; color:black"|
 *Silicon
+*Polysilicon
+*Silicon Oxide
 *Glass/Quartz
 <!-- |style="background:WhiteSmoke; color:black"|