Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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 ==LPCVD (Low Pressure Chemical Vapor Deposition) Silicon Nitride==
-[[image:Furnace_nitride1.jpg|300x300px|right|thumb|B2 Furnace LPCVD Nitride (old nitride furnace) positioned in cleanroom 2]]
+[[image:DC_nyhed_3.jpg|300x300px|right|thumb|6´´ LPCVD nitride furnace (new nitride furnace) positioned in cleanroom 14]]
-At Danchip there are two LPCVD nitride furnaces for deposition of silicon nitride: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or 6" wafers and a older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers. Please, be aware that it is not allowed to deposit low stress nitride in the new nitride furnace (to avoid problems with particles). In LabManager the two furnaces are named "Furnace: LPCVD nitride (6")" and "Furnace LPCVD nitride", respectively. Both furnaces are Tempress horizontal furnaces.
+[[image:Furnace_nitride1.jpg|300x300px|right|thumb|LPCVD nitride furnace (old nitride furnace) positioned in cleanroom 2]]
+At Danchip there are two LPCVD nitride furnaces for deposition of silicon nitride: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" or 6" wafers and an older furnace (installed in 1995) for deposition of low stress (i.e. silicon rich) nitride on 4" wafers. Please be aware that it is not allowed to deposit low stress nitride in the new nitride furnace (to avoid problems with particles). In LabManager the two furnaces are named "Furnace: LPCVD nitride (6")" and "Furnace: LPCVD nitride", respectively. Both furnaces are Tempress horizontal furnaces.
-The LPCVD silicon nitride deposition is a batch process, meaning that you can run a batch of up to 25-35 wafers at a time. The deposition takes place at temperatures of 780-835 degrees Celsius and at pressures of 200-230 mTorr. The reactive gases are ammonia (NH<sub>3</sub>) and dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>). The LPCVD nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the old nitride furnace we have two standard silicon nitride processes: One for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition of low stress nitride (SRN) on 4" wafers. On the new nitride furnace we have two standard recipes for deposition of stoichiometric nitride: One for 4" wafers and one for 6" wafers.
+The LPCVD silicon nitride deposition is a batch process, meaning nitride can be deposited on a batch of up to 17 wafers (in the old nitride furnace) or 25 wafers (in the new nitride furnace) at a time. The deposition takes place at temperatures of 780-845 degrees Celsius and at pressure of 120-200 mTorr. The reactive gases are ammonia (NH<sub>3</sub>) and dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>). The LPCVD nitride has a good step coverage, and the film thickness is very uniform over the wafers.
-To get information on how to operate the furnace please read the user manuals which are uploaded to LabManager on the machine page.
+On the old nitride furnace there are one standard recipe for deposition of low stress nitride (SRN) on 4" wafers. On the new nitride furnace there are two standard recipes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>), one for 4" wafers and one for 6" wafers.
+To get information on how to operate the furnaces please read the user manuals which are uploaded to LabManager on the machine page or consult the Furnace group at Danchip (furnace@danchip.dtu.dk).
 ==Process Knowledge==