Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions

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-'''Feedback to this page''': '''[mailto:Characterization@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/Topographic_measurement&action=edit click here]'''
+'''Feedback to this page''': '''[mailto:Characterization@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Topographic_measurement click here]'''
-Topographic measurements are measurements were you can measure hight differences on your substrate. If you measure in many spots of the substrate you can get a topographic image of the substrate.
+Topographic measurements are measurements of height differences on your sample. If you measure many spots on the sample you can get a topographic image of the surface.
-At DTU Nanolab we have five systems for topographic measurements:
+At DTU Nanolab we have eight systems for topographic measurements:
-*Dektak stylus profilers (Dektak XTA, Dektak 3ST and Dektak 8) - ''Profiler for measuring micro structures''
+*Dektak stylus profilers (Dektak XTA, Dektak 8, Dektak 150 and Dektak 3ST) - ''Profilers for measuring micro structures''
-*Optical Profiler (Sensofar) - ''3D Profiler for measuring micro structures''
+*Optical profilers (Optical profiler Sensofar and Optical profiler Filmetrics) - ''3D Profilers for measuring micro structures''
-*Nanoman - ''AFM for measuring nano structures''
+*AFMs (AFM Icon-PT1 and AFM Icon-PT2) - ''AFMs for measuring nano structures''
 '''High Aspect ratio structures'''<br/>
-The fact that the tips of the Dektak profilers and the AFM are shaped like a cone with some tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 µm wide trench is etched deeper than approximately 18 µm, the tip of the Dektak will not be able to reach the bottom. The optical profiler uses a light beam that is focused through an objective. Therefore it is able to measure higher aspect ratios. The aspect ratio is limited by the possibility for the light to reach the bottom and get back to the detector. On some samples we have been able to measure aspect ratios above 1:10. Otherwise the solution is to cleave the sample along a line that is perpendicular to the trench and then inspect the profile in a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]] or a microscope (for large structures).
+The fact that the stylus tip of a Dektak profilers or an AFM is shaped like a cone with some finite tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 µm wide trench is etched deeper than approximately 18 µm, the tip of the Dektak will not be able to reach the bottom. The optical profiler uses a light beam that is focused through an objective. Therefore it is able to measure higher aspect ratios. The aspect ratio is limited by the possibility for the light to reach the bottom and get back to the detector. On some samples we have been able to measure aspect ratios above 1:10. Otherwise the solution is to cleave the sample along a line that is perpendicular to the trench and then inspect the profile in a [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|scanning electron microscope]] or a microscope (for large structures).